Influence of oxygen deficiency in indium tin oxide on the performance of polymer light-emitting diodes

被引：10

作者：

Chen, Ming-Chih ^{[1
]}

Chen, Show-An ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 30013, Taiwan

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 08期

关键词：

Indium tin oxide; Oxygen deficiency; Polymer light-emitting diodes; Leakage current; THIN-FILMS; DEVICES; TRANSPARENT; INJECTION; FAILURE; ANODE;

D O I：

10.1016/j.tsf.2008.09.088

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated effects of oxygen deficiency in the indium tin oxide (ITO) on the performance of poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV)-based polymer light-emitting diodes, in which the ITO anode was deposited by radio frequency magnetron sputtering at different oxygen flow rates. We found that the degree of oxygen deficiency in the ITO films can affect the device performance significantly and is a source of current leakage. At the optimal oxygen flow rate, the leakage current of devices can be reduced and the balance between hole and electron fluxes can be promoted in the MEH-PPV layer to improve device efficiency. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2708 / 2711

页数：4

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