Stress-driven magnetization reversal in magnetostrictive films with in-plane magnetocrystalline anisotropy

被引:20
作者
Iwasaki, Y
机构
[1] Sony Corp, Core Technol & Network Co, Recording Media Co, Tagajo, Miyagi 9850842, Japan
[2] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 9800845, Japan
关键词
magnetization process; magnetostriction; magnetic anisotropy; MRAM;
D O I
10.1016/S0304-8853(01)00841-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Possible mechanisms of reversing magnetization using stress-induced anisotropy are studied by numerical simulation. A magnetostrictive film with 4-fold magnetocrystalline anisotropy is proposed as a candidate with which full reversal can be pet-formed by a cycle of uniaxial stress/strain introduced along a fixed direction in the film plane. Another possibility of stress-driven magnetization reversal is also proposed utilizing precession of magnetization driven by an isotropic strain introduced in a magnetostrictive element. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:395 / 397
页数:3
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