Evidence of Germanium precipitation in phase-change Ge1-xTex thin films by Raman scattering

被引：39

作者：

Gourvest, E. ^{[1
]}

Lhostis, S. ^{[1
]}

Kreisel, J. ^{[4
]}

Armand, M. ^{[3
]}

Maitrejean, S. ^{[3
]}

Roule, A. ^{[3
]}

Vallee, C. ^{[2
]}

机构：

[1] STMicroelectronics, F-38926 Crolles, France

[2] UJF, CNRS, GrenobleINP, LTM UMR 5129, F-38054 Grenoble 9, France

[3] Minatec, CEA LETI, F-38054 Grenoble, France

[4] LMGP GrenobleINP Minatec, F-38016 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 03期

关键词：

annealing; crystallisation; germanium compounds; phase change materials; precipitation; Raman spectra; reflectivity; semiconductor materials; semiconductor thin films; GETE; SEMICONDUCTOR;

D O I：

10.1063/1.3186077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ annealing Raman scattering is used to evidence germanium postcrystallization in the crystalline phase of Ge-rich phase-change GeTe thin films. Both reflectivity and Raman scattering show that the crystallization temperature of the as-deposited amorphous phase increases with increasing Ge content going from T-c=180 degrees C (Ge0.5Te0.5) to 360 degrees C for Ge-rich Ge0.76Te0.24. The crystallized phase adopts the rhombohedral alpha-GeTe phase structure, and whatever the starting composition. For Ge-rich GeTe we observe a second characteristic temperature around 375 degrees C, which signs the crystallization of a precipitated cubic Ge phase and thus the presence of two distinct phases.

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页数：3

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