Electroluminescent and electrical characteristics of polar and nonpolar InGaN/GaN light-emitting diodes at low temperature

被引：7

作者：

Masui, Hisashi ^{[1
]}

Schmidt, Mathew C.

Chakraborty, Arpan

Nakamura, Shuji

Denbaars, Steven P.

机构：

[1] Univ Calif Santa Barbara, Coll Engn, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Coll Engn, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, NICP, ERATO, UCSB Grp,Japan Sci & Technol Agcy, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 10A期

关键词：

light-emitting diode (LED); electroluminescence (EL); low temperature (LT) measurement; polarization-induced internal electric field; nonpolar-plane GaN;

D O I：

10.1143/JJAP.45.7661

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Three types of InGaN multiple quantum-well light-emitting diodes (LEDs) were subjected to electroluminescent and electrical characterization at low temperatures and results were compared. Characterized samples included (0001) c-plane InGaN LEDs, (11 (2) over bar0) a-plane InGaN LEDs, and AlInGaP LEDs. While electroluminescence from the (11 (2) over bar0) InGaN LEDs and AlInGaP LEDs extinguished and became highly electrically resistive at low temperature, the (0001) InGaN LEDs emitted light down to 7 K. This result suggested the continued presence of electrical carriers in the (000 1) InGaN LEDs at low temperatures. A carrier-generation mechanism is proposed by examining the energy band diagram with polarization-induced internal electric fields taken into account. Polarization fields in the (0001) InGaN LEDs give rise to local field emission, hole-trapping potential, and interface states, which assist hole injection. It is believed that (0001) InGaN LED operation was possible at low temperatures because of these effects.

引用

页码：7661 / 7666

页数：6

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