Microstructures and electrical properties of SrRuO3 thin films on LaAlO3 substrates

被引:13
作者
Chu, F
Jia, QX
Landrum, G
Wu, XD
Hawley, M
Mitchell, TE
机构
[1] Mat. Science and Technology Division, Los Alamos National Laboratory, Los Alamos
[2] Department of Chemistry, Materials Science Center, Cornell University, Ithaca
关键词
conductive SrRuO3; LaAlO3; substrate; microstructures; thin films;
D O I
10.1007/s11664-996-0031-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Conductive SrRuO3 thin films have been deposited using pulsed laser deposition on LaAlO3 substrates at different substrate temperatures, Structural and microstructural properties of the SrRuO3/LaAlO3 system have been studied using x-ray diffraction, scanning electron microscopy, and scanning tunneling microscopy, Electrical properties of SrRuO3 thin films have been measured. It was found that the film deposited at 250 degrees C is amorphous, showing semiconductor-like temperature dependence of electrical conductivity. The film deposited at 425 degrees C is crystalline with very fine grain size (100 similar to 200 Angstrom), showing both metallic and semiconductor-like temperature dependence of electrical conductivity in different temperature regions. The film deposited at 775 degrees C shows a resistivity of 280 mu Omega . cm at room temperature and a residual resistivity ratio of 8.4, Optimized deposition conditions to grow SrRuO3 thin films on LaAlO3 substrates have been found. Possible engineering applications of SrRuO3 thin films deposited at different temperatures are discussed, Bulk and surface electronic structures of SrRuO3 are calculated using a semi-empirical valence electron linear combination of atomic orbitals approach, The theoretical calculation results are employed to understand the electrical properties of SrRuO3 thin films.
引用
收藏
页码:1754 / 1759
页数:6
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