Oxygen-activated epitaxial recrystallization of Li-implanted α-SiO2

被引：27

作者：

Gustafsson, M

Roccaforte, F

Keinonen, J

Bolse, W

Ziegeler, L

Lieb, KP

机构：

[1] Univ Helsinki, Accelerator Lab, FIN-00014 Helsinki, Finland

[2] Univ Gottingen, Inst Phys 2, D-37073 Gottingen, Germany

[3] Univ Gottingen, Sonderforsch Bereich 345, D-37073 Gottingen, Germany

[4] Univ Helsinki, Accelerator Lab, FIN-00014 Helsinki, Finland

[5] Univ Stuttgart, Inst Strahlenphys, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.61.3327

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

A very strong exchange of oxygen between alpha-quartz (O-16) and annealing atmosphere (O-18) observed during solid-phase epitaxial growth of Li+- and Cs+-ion-beam-amorphized single-crystal alpha-quartz is reported. Epitaxial regrowth was observed in Li-irradiated samples after 700 degrees C annealing and in Cs-irradiated samples after 870 degrees C annealing, by means of Rutherford backscattering spectrometry in channeling geometry. The O-18/O-16 exchange and the outdiffusion of Li were investigated by the use of time-of-flight elastic recoil detection analysis. Our experiments show that alkali-ion implantation strongly enhances the exchange of O-16 in SiO2 with O-18 of the annealing atmosphere. The exchange accompanies the loss of alkali atoms, thus favoring the recrystallization of the lattice. Mechanisms of epitaxial regrowth in Li- and Cs-implanted alpha-quartz are discussed.

引用

页码：3327 / 3332

页数：6

共 42 条

[1]

ION-IMPLANTATION EFFECTS IN CRYSTALLINE QUARTZ [J].