XPS analysis of surface chemistry of near surface region of epiready GaAs(100) surface treated with (NH4)2Sx solution

被引:34
作者
Arabasz, S. [1 ]
Bergignat, E.
Hollinger, G.
Szuber, J.
机构
[1] Silesian Tech Univ, Dept Elect Technol, PL-44100 Gliwice, Poland
[2] Ecole Cent Lyon, CNRS, UMR 5512, LEOM, F-69131 Ecully, France
关键词
GaAs; passivation; sullidation; XPS;
D O I
10.1016/j.apsusc.2006.03.061
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work we analyze the effect of (NH)(2)S-x wet treatment on the GaAs(1 0 0) covered with "epiready" oxide layer without any pretreatment in order to check the removal of oxides and carbon-related contamination, and the formation of sulfur species. The sulfidation procedure consisted of epiready sample dipping (at room and 40 degrees C temperatures) in an ammonium polysulfide solution combined with a UHV flash annealing up to 500 degrees C. The inspection of the XPS As 2p(3/2) and Ga 2p(3/2) Spectra taken at surface sensitive mode revealed: (i) the temperature-dependent reduction of the amount of GaAs oxides and carbon contamination after sulfidation, and almost their complete removal after subsequent annealing, (ii) the creation of sulfur bonds with both Ga and As, with more thermally stable Ga-S bonds, and (iii) the slight reduction in elemental arsenic amount. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:7659 / 7663
页数:5
相关论文
共 32 条
[1]   In situ characterisation of epiready III-V substrates for MOVPE [J].
Allwood, DA ;
Grant, IR ;
Mason, NJ ;
Palmer, RA ;
Walker, PJ .
JOURNAL OF CRYSTAL GROWTH, 2000, 221 :160-165
[2]   XPS study of surface chemistry of epiready GaAs(100) surface after (NH4)2Sx passivation [J].
Arabasz, S ;
Bergignat, E ;
Hollinger, G ;
Szuber, J .
VACUUM, 2006, 80 (08) :888-893
[3]   Mechanisms responsible for chemical shifts of core-level binding energies and their relationship to chemical bonding [J].
Bagus, PS ;
Illas, F ;
Pacchioni, G ;
Parmigiani, F .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1999, 100 :215-236
[4]   XPS analysis of wet chemical etching of GaAs(110) by Br2-H2O:: comparison of emersion and model experiments [J].
Beerbom, M ;
Henrion, O ;
Klein, A ;
Mayer, T ;
Jaegermann, W .
ELECTROCHIMICA ACTA, 2000, 45 (28) :4663-4672
[5]   PHONON BROADENING OF X-RAY PHOTOEMISSION LINEWIDTHS [J].
CITRIN, PH ;
EISENBER.P ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1974, 33 (16) :965-969
[6]   ENERGY-LEVELS OF SEMICONDUCTOR SURFACE VACANCIES [J].
DAW, MS ;
SMITH, DL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1028-1031
[7]   OXIDES ON GAAS AND INAS SURFACES - AN X-RAY-PHOTOELECTRON-SPECTROSCOPY STUDY OF REFERENCE COMPOUNDS AND THIN OXIDE LAYERS [J].
HOLLINGER, G ;
SKHEYTAKABBANI, R ;
GENDRY, M .
PHYSICAL REVIEW B, 1994, 49 (16) :11159-11167
[8]   SI-INDIFFUSION AND O-OUTDIFFUSION PROCESSES AT SI/SIO2/GAAS-OXIDES/GAAS STRUCTURES - IMPLICATIONS IN SIO2 FORMATION AND GAAS REGROWTH [J].
JIMENEZ, I ;
SACEDON, JL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06) :3095-3102
[9]   Effect of prepared GaAs surface on the sulfidation with (NH4)2Sx solution [J].
Kang, MG ;
Park, HH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (01) :88-92
[10]   Bonding and structural changes of natively oxidized GaAs surface during ion induced deposition of Au [J].
Kang, MG ;
Park, HH .
THIN SOLID FILMS, 1999, 355 :435-439