SI-INDIFFUSION AND O-OUTDIFFUSION PROCESSES AT SI/SIO2/GAAS-OXIDES/GAAS STRUCTURES - IMPLICATIONS IN SIO2 FORMATION AND GAAS REGROWTH

被引：4

作者：

JIMENEZ, I

SACEDON, JL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3095 / 3102

页数：8

共 27 条

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