X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE INTERFACIAL REACTIVITY OF SI WITH THE OXIDIZED GAAS (100) SURFACE

被引：10

作者：

CUBERES, MT

SACEDON, JL

机构：

[1] Instituto de Ciencia de Materiales, CSIC, Madrid 28006

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 26期

关键词：

D O I：

10.1063/1.104198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The chemistry of the interfacial reactions of Si with GaAs oxides has been investigated by x-ray photoelectron spectroscopy (XPS). We present evidence of a room-temperature chemical reaction between Si and the oxides of GaAs that leads to complete reduction of the As and Ga oxides. Si deposition on oxidized GaAs resulted in the formation of a Si/SiO2/GaAs structure as revealed by the XPS measurements. The results of the evolution of the Ga(LMM), As(2p), Ga(2p), and Si(2p) core level spectra during the deposition of Si are comparatively studied and discussed.

引用

页码：2794 / 2796

页数：3

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