THE EFFECTS OF SUBCUTANEOUS OXIDATION AT THE INTERFACES BETWEEN ELEMENTAL AND COMPOUND SEMICONDUCTORS AND SIO2 THIN-FILMS DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：47

作者：

LUCOVSKY, G

KIM, SS

TSU, DV

FOUNTAIN, GG

MARKUNAS, RJ

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[2] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：861 / 869

页数：9

共 22 条

[1]

ADAMS AC, 1983, SOLID STATE TECHNOL, V26, P135

[2] NATIVE OXIDE FORMATION ON CDTE [J].

CHOI, SS ;

LUCOVSKY, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1198-1203

[3] EFFECTS OF THERMAL HISTORY ON STRESS-RELATED PROPERTIES OF VERY THIN-FILMS OF THERMALLY GROWN SILICON DIOXIDE [J].

FITCH, JT ;

LUCOVSKY, G ;

KOBEDA, E ;

IRENE, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02) :153-162

[4]

FITCH JT, 1989, MRS S P, V130, P128

[5] LOW INTERFACE STATE DENSITY SIO2 DEPOSITED AT 300-DEGREES-C BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION ON RECONSTRUCTED SI SURFACES [J].

FOUNTAIN, GG ;

RUDDER, RA ;

HATTANGADY, SV ;

MARKUNAS, RJ ;

LINDORME, PS .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4744-4746

[6] EVIDENCE FOR THE OCCURRENCE OF SUBCUTANEOUS OXIDATION DURING LOW-TEMPERATURE REMOTE PLASMA ENHANCED DEPOSITION OF SILICON DIOXIDE FILMS [J].

FOUNTAIN, GG ;

HATTANGADY, SV ;

RUDDER, RA ;

MARKUNAS, RJ ;

LUCOVSKY, G ;

KIM, SS ;

TSU, DV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :576-580

[7] LOW HYDROGEN CONTENT SILICON-NITRIDE DEPOSITED AT LOW-TEMPERATURE BY NOVEL REMOTE PLASMA TECHNIQUE [J].

HATTANGADY, SV ;

FOUNTAIN, GG ;

RUDDER, RA ;

MARKUNAS, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :570-575

[8] DEPOSITION OF DEVICE QUALITY SILICON DIOXIDE THIN-FILMS BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

KIM, SS ;

TSU, DV ;

LUCOVSKY, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1740-1744

[9] PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION - DIFFERENCES BETWEEN DIRECT AND REMOTE PLASMA EXCITATION [J].

LUCOVSKY, G ;

TSU, DV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2231-2238

[10] DEPOSITION OF SILICON-BASED DIELECTRICS BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

LUCOVSKY, G ;

TSU, DV .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :804-814

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