THE EFFECTS OF SUBCUTANEOUS OXIDATION AT THE INTERFACES BETWEEN ELEMENTAL AND COMPOUND SEMICONDUCTORS AND SIO2 THIN-FILMS DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：47

作者：

LUCOVSKY, G

KIM, SS

TSU, DV

FOUNTAIN, GG

MARKUNAS, RJ

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[2] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：861 / 869

页数：9

共 22 条

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