SPECTROSCOPIC EMISSION STUDIES OF O2/HE AND N2/HE PLASMAS IN REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：37

作者：

TSU, DV

PARSONS, GN

LUCOVSKY, G

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575267

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1849 / 1854

页数：6

共 11 条

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[5] PROPERTIES OF INTRINSIC AND DOPED A-SI-H DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

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[8] SILICON-NITRIDE AND SILICON DIIMIDE GROWN BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

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