DIFFERENCES BETWEEN DIRECT AND REMOTE PLASMA ENHANCED CVD

被引：16

作者：

LUCOVSKY, G

TSU, DV

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90063-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：265 / 268

页数：4

共 7 条

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[3] DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

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[6] AR(3P2) INDUCED CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON [J].

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