SILICON-NITRIDE AND SILICON DIIMIDE GROWN BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：55

作者：

TSU, DV

LUCOVSKY, G

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573875

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：480 / 485

页数：6

共 18 条

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[8] DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

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[9] NEAR-NEIGHBOR CHEMICAL BONDING EFFECTS ON SI ATOM NATIVE BONDING DEFECTS IN SILICON-NITRIDE AND SILICON DIOXIDE INSULATORS [J].

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