LOW HYDROGEN CONTENT SILICON-NITRIDE DEPOSITED AT LOW-TEMPERATURE BY NOVEL REMOTE PLASMA TECHNIQUE

被引：53

作者：

HATTANGADY, SV

FOUNTAIN, GG

RUDDER, RA

MARKUNAS, RJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575891

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：570 / 575

页数：6

相关论文

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