CHARACTERIZATION OF CHARGE INJECTION AND TRAPPING IN SCALED SONOS MONOS MEMORY DEVICES

被引：28

作者：

CHAO, CC ^{[1
]}

WHITE, MH ^{[1
]}

机构：

[1] LEHIGH UNIV, SHERMAN FAIRCHILD CTR, BETHLEHEM, PA 18015 USA

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 03期

关键词：

Acknowledgements-The authors would like to thank Dr J-H. Huang for the XTEM study; and Mr F. C. Miller for technology support in device fabrication. This work was supported in part by the Sherman Fairchild Foundation; the National Science Foundation; and the Hewlett-Packard Design Aids Program;

D O I：

10.1016/0038-1101(87)90189-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：307 / 319

页数：13

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