DEPOSITION OF SILICON-BASED DIELECTRICS BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：24

作者：

LUCOVSKY, G

TSU, DV

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90808-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：804 / 814

页数：11

共 24 条

[1]

ADAMS AC, 1983, SOLID STATE TECHNOL, V26, P135

[2] AUGER-ELECTRON SPECTROSCOPY STUDIES OF SILICON-NITRIDE, OXIDE, AND OXYNITRIDE THIN-FILMS - MINIMIZATION OF SURFACE DAMAGE BY ARGON AND ELECTRON-BEAMS [J].

CHAO, SS ;

TYLER, JE ;

TSU, DV ;

LUCOVSKY, G ;

MANTINI, MJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1283-1287

[3]

JOLLY WL, 1969, ADV CHEM, V80, P156

[4]

KERN W, 1978, THIN FILM PROCESSES, pCH2

[5]

KNIGHTS JC, 1981, APPL PHYS LETT, V38, P337

[6] DECOMPOSITION KINETICS OF A STATIC DIRECT-CURRENT SILANE GLOW-DISCHARGE [J].

LONGEWAY, PA ;

ESTES, RD ;

WEAKLIEM, HA .

JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (01) :73-77

[7] DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

LUCOVSKY, G ;

RICHARD, PD ;

TSU, DV ;

LIN, SY ;

MARKUNAS, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :681-688

[8] PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION - DIFFERENCES BETWEEN DIRECT AND REMOTE PLASMA EXCITATION [J].

LUCOVSKY, G ;

TSU, DV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2231-2238

[9] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS [J].

LUCOVSKY, G .

SOLID STATE COMMUNICATIONS, 1979, 29 (08) :571-576

[10]

LUCOVSKY G, 1987, J VACUUM SCI TECHN B, V5, P531

← 1 2 3 →