AUGER-ELECTRON SPECTROSCOPY STUDIES OF SILICON-NITRIDE, OXIDE, AND OXYNITRIDE THIN-FILMS - MINIMIZATION OF SURFACE DAMAGE BY ARGON AND ELECTRON-BEAMS

被引：53

作者：

CHAO, SS ^{[1
]}

TYLER, JE ^{[1
]}

TSU, DV ^{[1
]}

LUCOVSKY, G ^{[1
]}

MANTINI, MJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574791

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1283 / 1287

页数：5

共 20 条

[1] PREFERENTIAL SPUTTERING OF SI3N4 [J].

BHATTACHARYA, RS ;

HOLLOWAY, PH .

APPLIED PHYSICS LETTERS, 1981, 38 (07) :545-546

[2] A STUDY OF CHEMICAL BONDING IN SUBOXIDES OF SILICON USING AUGER-ELECTRON SPECTROSCOPY [J].

CHAO, SS ;

TYLER, JE ;

TAKAGI, Y ;

PAI, PG ;

LUCOVSKY, G ;

LIN, SY ;

WONG, CK ;

MANTINI, MJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1574-1579

[3] ELECTRON AND ION-BEAM DEGRADATION EFFECTS IN AES ANALYSIS OF SILICON-NITRIDE THIN-FILMS [J].

FRANSEN, F ;

VANDENBERGHE, R ;

VLAEMINCK, R ;

HINOUL, M ;

REMMERIE, J ;

MAES, HE .

SURFACE AND INTERFACE ANALYSIS, 1985, 7 (02) :79-87

[4] SI(LVV) AUGER-SPECTRA OF AMORPHOUS SI-OXIDE, SI-NITRIDE, AND SI-OXINITRIDE [J].

HEZEL, R ;

LIESKE, N .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2566-2568

[5] CHEMICAL-SHIFTS IN AUGER-ELECTRON SPECTRA FROM SILICON IN SILICON-NITRIDE [J].

HOLLOWAY, PH .

SURFACE SCIENCE, 1976, 54 (02) :506-508

[6] ATTEMPT TO UNDERSTAND PREFERENTIAL SPUTTERING [J].

KELLY, R .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :553-558

[7] DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

LUCOVSKY, G ;

RICHARD, PD ;

TSU, DV ;

LIN, SY ;

MARKUNAS, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :681-688

[8] NEAR-NEIGHBOR CHEMICAL BONDING EFFECTS ON SI ATOM NATIVE BONDING DEFECTS IN SILICON-NITRIDE AND SILICON DIOXIDE INSULATORS [J].

LUCOVSKY, G ;

LIN, SY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1122-1128

[9] AES INVESTIGATION OF THE CHEMICAL-STRUCTURE OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

MADDEN, HH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :625-629

[10] AES INVESTIGATION OF THE CHEMICAL-STRUCTURE OF SILICON OXYNITRIDE FILMS [J].

MADDEN, HH ;

HOLLOWAY, PH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :618-621

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