AES INVESTIGATION OF THE CHEMICAL-STRUCTURE OF PLASMA-DEPOSITED SILICON-NITRIDE

被引：27

作者：

MADDEN, HH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期

关键词：

D O I：

10.1149/1.2127471

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：625 / 629

页数：5

共 21 条

[1] DEGRADATION OF RADIATION HARDNESS IN CMOS INTEGRATED-CIRCUITS PASSIVATED WITH PLASMA-DEPOSITED SILICON-NITRIDE [J].

ANDERSON, RE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :5180-5184

[2] STRUCTURE OF SILICON-NITRIDE FILMS .2. NONSTOICHIOMETRIC SILICON-NITRIDE [J].

EDELMAN, FL ;

ZAITSEV, BN ;

LATUTA, VZ ;

KHOROMENKO, AA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (01) :49-56

[3] CHEMICAL-SHIFTS IN AUGER-ELECTRON SPECTRA FROM SILICON IN SILICON-NITRIDE [J].

HOLLOWAY, PH .

SURFACE SCIENCE, 1976, 54 (02) :506-508

[4] TRANSITION DENSITY OF STATES FOR SI(100) FROM L1L23V AND L23VV AUGER-SPECTRA [J].

HOUSTON, JE ;

MOORE, G ;

LAGALLY, MG .

SOLID STATE COMMUNICATIONS, 1977, 21 (09) :879-882

[5] VALENCE-BAND DENSITY OF STATES FOR SI AND SIO2 USING AUGER-ELECTRON SPECTROSCOPY [J].

HOUSTON, JE ;

LAGALLY, MG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :361-361

[6]

HOUSTON JE, UNPUBLISHED

[7] LVV SPECTRA OF SI,SIO2 AND SI3N4 [J].

JOHANNESSEN, JS ;

SPICER, WE ;

STRAUSSER, YE .

PHYSICA SCRIPTA, 1979, 19 (04) :355-359

[8] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

LANFORD, WA ;

RAND, MJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477

[9] AES INVESTIGATION OF THE CHEMICAL-STRUCTURE OF SILICON OXYNITRIDE FILMS [J].

MADDEN, HH ;

HOLLOWAY, PH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :618-621

[10] CORRECTION OF DISTORTIONS IN SPECTRAL-LINE PROFILES - APPLICATIONS TO ELECTRON SPECTROSCOPIES [J].

MADDEN, HH ;

HOUSTON, JE .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3071-3082

← 1 2 3 →