Infrared photodiode based on colloidal PbSe nanocrystal quantum dots

被引:29
作者
Cui, Dehu [1 ]
Xu, Jian
Xu, Sheng-Yong
Paradee, Gary
Lewis, Bradley A.
Gerhold, Michael D.
机构
[1] Penn State Univ, University Pk, PA 16802 USA
[2] Peking Univ, Beijing 100871, Peoples R China
[3] N Carolina State Univ, Raleigh, NC 27695 USA
基金
美国国家科学基金会;
关键词
infrared detectors; photoconductivity; photodiode; photovoltaic effects; semiconductor materials;
D O I
10.1109/TNANO.2006.877432
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report in this paper our studies on the photoconductivity and photovoltaic effects of colloidal PbSe nanocrystal quantum dots (NQDs) which were embedded in conductive polymer matrices to form hybrid polymer/NQD infrared photodiodes. The generation of photocarriers in PbSe NQDs and their transport in NQD-polymer composites were described by a simplified band diagram picture of the device. Both photocurrent and photovoltage outputs were measured from the NQD-incorporated photodiode upon the illumination of near-infrared (NIR) light, whereas the net polymer-based devices do not exhibit any photoresponsivity. The intensity dependence of the photocurrent indicates the pseudomonomolecular recombination kinetics in the T QD-polymer composite. The measured photocurrent spectrum is consistent with the absorption characteristic of PbSe NQDs. Further enhancement of the photodiode efficiency can be achieved by engineering the nanocrystal surface to reduce the potential barriers due to the ligant capping molecules.
引用
收藏
页码:362 / 367
页数:6
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