Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators

被引：16

作者：

Riekkinen, T. ^{[1
]}

Nurmela, A. ^{[1
]}

Molarius, J. ^{[1
]}

Pensala, T. ^{[1
]}

Kostamo, P. ^{[2
]}

Ylilammi, M. ^{[1
]}

van Dijken, S. ^{[3
]}

机构：

[1] VTT Tech Res Ctr Finland, FI-02044 Espoo, Finland

[2] Aalto Univ, Micro & Nanosci Lab, FI-02015 Helsinki, Finland

[3] Aalto Univ, Dept Appl Phys, FI-02015 Helsinki, Finland

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 24期

关键词：

Aluminium nitride; Sputtering; Piezoelectric effect; Crystallization; Surface morphology; Molybdenum; Nickel; Titanium; NITRIDE THIN-FILMS; ALUMINUM NITRIDE; BOTTOM ELECTRODES; AIN FILMS; ORIENTATION; GROWTH; MO;

D O I：

10.1016/j.tsf.2009.04.060

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the Mo and c-axis oriented AlN films were found to vary strongly with seed layer material and thickness. The smoothest Mo electrodes were obtained on thin Ti films. Reactive sputtering of AlN on top of these optimized electrodes resulted in a dense columnar grain structure with a well-aligned (002) crystal orientation and good electro-acoustic properties, including an effective coupling coefficient of 6.89% and quality factor above 1000. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：6588 / 6592

页数：5

共 22 条

[1]

Preparation of highly oriented aluminum nitride thin films on molybdenum bottom electrodes using metal interlayers [J].