Far-infrared response of free charge carriers localized in semiconductor nanoparticles

被引:110
作者
Nemec, Hynek [1 ,2 ]
Kuzel, Petr [1 ]
Sundstrom, Villy [2 ]
机构
[1] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic
[2] Lund Univ, Dept Chem Phys, S-22241 Lund, Sweden
关键词
carrier mean free path; electrical conductivity; high-frequency effects; Monte Carlo methods; nanoparticles; particle size; semiconductor materials; TERAHERTZ; PHOTOCONDUCTIVITY; CONDUCTION; DYNAMICS; ZNO;
D O I
10.1103/PhysRevB.79.115309
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A Monte Carlo method is employed to calculate the dynamical conductivity in the terahertz range of free charge carriers localized in semiconductor nanoparticles. The shape of the conductivity spectrum is essentially determined by the probability of carrier transition through interparticle boundaries and by the ratio of the nanoparticle size and carrier mean free path in the bulk. It is shown that the conductivity spectrum exhibits similar features as the classical extension of the Drude conductivity of electrons proposed by Smith [Phys. Rev. B 64, 155106 (2001)]. We find and discuss the link of this model to the results of our simulations which suggests an interpretation of the phenomenological parameters of the Drude-Smith model.
引用
收藏
页数:7
相关论文
共 25 条
[21]   Exploring dynamics in the far-infrared with terahertz spectroscopy [J].
Schmuttenmaer, CA .
CHEMICAL REVIEWS, 2004, 104 (04) :1759-1779
[22]   Classical generalization of the Drude formula for the optical conductivity [J].
Smith, NV .
PHYSICAL REVIEW B, 2001, 64 (15)
[23]   Binding studies of molecular linkers to ZnO and MgZnO nanotip films [J].
Taratula, O ;
Galoppini, E ;
Wang, D ;
Chu, D ;
Zhang, Z ;
Chen, HH ;
Saraf, G ;
Lu, YC .
JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (13) :6506-6515
[24]   Carrier localization and cooling in dye-sensitized nanocrystalline titanium dioxide [J].
Turner, GM ;
Beard, MC ;
Schmuttenmaer, CA .
JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (45) :11716-11719
[25]   Terahertz conductivity of thin gold films at the metal-insulator percolation transition [J].
Walther, M. ;
Cooke, D. G. ;
Sherstan, C. ;
Hajar, M. ;
Freeman, M. R. ;
Hegmann, F. A. .
PHYSICAL REVIEW B, 2007, 76 (12)