Optoelectric spin injection in semiconductor heterostructures without a ferromagnet

被引:13
作者
Mal'shukov, AG [1 ]
Chao, KA
机构
[1] Russian Acad Sci, Inst Spect, Troitsk 142092, Moscow Region, Russia
[2] Lund Univ, Dept Phys, Solid State Theory Div, S-22362 Lund, Sweden
关键词
D O I
10.1103/PhysRevB.65.241308
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have shown that electron-spin density can be generated by a dc current flowing across a pn junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination when the conduction electron momentum distribution is shifted with respect to the momentum distribution of holes in the spin-split valence subbands. Spin current appears when the spin polarization is injected from the quantum well into the n-doped region of the pn junction. The accompanied emission of circularly polarized light from the quantum well can serve as a spin polarization detector.
引用
收藏
页码:2413081 / 2413084
页数:4
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