Silicon nanocrystal memories

被引：71

作者：

Lombardo, S

De Salvo, B

Gerardi, C

Baron, T

机构：

[1] CNR, IMM, Sez Catania, I-95121 Catania, Italy

[2] CEA, LETI, F-38054 Grenoble, France

[3] ST Microelect, I-95121 Catania, Italy

[4] CNRS, LTM, Grenoble, France

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 72卷 / 1-4期

关键词：

D O I：

10.1016/j.mee.2004.01.020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present an overview of memory structures fabricated by our group by using silicon nanocrystals as storage nodes. These devices show promising characteristics as candidates for future deep-submicron non-volatile memories. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：388 / 394

页数：7

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