Silicon electro-optic modulators using p-i-n diodes embedded 10-micron-diameter microdisk resonators
被引:96
作者:
Zhou, Linjie
论文数: 0引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Photon Device Lab, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Photon Device Lab, Hong Kong, Hong Kong, Peoples R China
Zhou, Linjie
[1
]
Poon, Andrew W.
论文数: 0引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Photon Device Lab, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Photon Device Lab, Hong Kong, Hong Kong, Peoples R China
Poon, Andrew W.
[1
]
机构:
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Photon Device Lab, Hong Kong, Hong Kong, Peoples R China
来源:
OPTICS EXPRESS
|
2006年
/
14卷
/
15期
关键词:
D O I:
10.1364/OE.14.006851
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
We demonstrate a silicon electro-optic modulator using a 10-micron- diameter microdisk resonator with a laterally integrated p-i-n diode surrounding essentially the entire microdisk. Our experiments reveal a modulation bandwidth of 510 MHz using a Q similar to 16,900 resonance mode under a square-wave drive voltage of similar to 0.9 V forward bias and similar to- 6 V reverse bias. (c) 2006 Optical Society of America.