Organic thin-film transistors with poly(methyl silsesquioxane) modified dielectric interfaces

Poly(methyl silsesquioxane) modification of SiO2 gate dielectric surface leads to significantly improved performance of polythiophene-based organic thin-film transistors. The beneficial effects of this surface modification on transistor performance are often significantly greater than those of other silane self-assembled monolayers (SAMs). This polymer modification approach can also be applied to solution-processed dielectric surfaces where the growth of silane SAMs is difficult, thus enabling fabrication of flexible organic thin-film transistor circuits on plastic substrates. (c) 2006 American Institute of Physics.