Model calculation of the scanned field enhancement factor of CNTs

被引：17

作者：

Ahmad, Amir

Tripathi, V. K.

机构：

[1] Solid State Phys Lab, Delhi 110054, India

[2] Indian Inst Technol, Dept Phys, New Delhi 110016, India

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 15期

关键词：

D O I：

10.1088/0957-4484/17/15/031

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The field enhancement factor of a carbon nanotube (CNT) placed in a cluster of CNTs is smaller than an isolated CNT because the electric field on one tube is screened by neighbouring tubes. This screening depends on the length of the CNTs and the spacing between them. We have derived an expression to compute the field enhancement factor of CNTs under any positional distribution of CNTs using a model of a floating sphere between parallel anode and cathode plates. Using this expression we can compute the field enhancement factor of a CNT in a cluster (non-uniformly distributed CNTs). This expression is used to compute the field enhancement factor of a CNT in an array (uniformly distributed CNTs). Comparison has been shown with experimental results and existing models.

引用

页码：3798 / 3801

页数：4

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