Achieving high-current carbon nanotube emitters

被引:187
作者
Minoux, E
Groening, O
Teo, KBK
Dalal, SH
Gangloff, L
Schnell, JP
Hudanski, L
Bu, IYY
Vincent, P
Legagneux, P
Amaratunga, GAJ
Milne, WI
机构
[1] Thales Res & Technol, F-91767 Palaiseau, France
[2] EMPA Mat Sci & Technol, CH-3602 Thun, Switzerland
[3] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
关键词
D O I
10.1021/nl051397d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
When a carbon nanotube emitter is operated at high currents (typically above 1 mu A per emitter), a small voltage drop (similar to few volts) along its length or at its contact generates a reverse/canceling electric field that causes a saturation-like deviation from the classical Fowler-Nordheim behavior with respect to the applied electric field. We present a correction to the Fowler-Nordheim equation to account for this effect, which is experimentally verified using field emission and contact electrical measurements on individual carbon nanotube emitters. By using rapid thermal annealing to improve both the crystallinity of the carbon nanotubes and their electrical contact to the substrate, it is possible to reduce this voltage drop, allowing very high currents of up to 100 mu A to be achieved per emitter with no significant deviation from the classical Fowler-Nordheim behavior.
引用
收藏
页码:2135 / 2138
页数:4
相关论文
共 26 条
[1]   Degradation and failure of carbon nanotube field emitters [J].
Bonard, JM ;
Klinke, C ;
Dean, KA ;
Coll, BF .
PHYSICAL REVIEW B, 2003, 67 (11) :10
[2]  
BRODIE I, 1992, ADV ELECTRON EL PHYS, V83, P1
[3]   Dynamic radiography using a carbon-nanotube-based field-emission x-ray source [J].
Cheng, Y ;
Zhang, J ;
Lee, YZ ;
Gao, B ;
Dike, S ;
Lin, W ;
Lu, JP ;
Zhou, O .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (10) :3264-3267
[4]   Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition [J].
Chhowalla, M ;
Teo, KBK ;
Ducati, C ;
Rupesinghe, NL ;
Amaratunga, GAJ ;
Ferrari, AC ;
Roy, D ;
Robertson, J ;
Milne, WI .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) :5308-5317
[5]   Carbon nanotube electron emitters with a gated structure using backside exposure processes [J].
Chung, DS ;
Park, SH ;
Lee, HW ;
Choi, JH ;
Cha, SN ;
Kim, JW ;
Jang, JE ;
Min, KW ;
Cho, SH ;
Yoon, MJ ;
Lee, JS ;
Lee, CK ;
Yoo, JH ;
Kim, JM ;
Jung, JE ;
Jin, YW ;
Park, YJ ;
You, JB .
APPLIED PHYSICS LETTERS, 2002, 80 (21) :4045-4047
[6]   Characterization of the field emission properties of individual thin carbon nanotubes [J].
de Jonge, N ;
Allioux, M ;
Doytcheva, M ;
Kaiser, M ;
Teo, KBK ;
Lacerda, RG ;
Milne, WI .
APPLIED PHYSICS LETTERS, 2004, 85 (09) :1607-1609
[7]   Field emission from individual multiwalled carbon nanotubes prepared in an electron microscope [J].
de Jonge, N ;
van Druten, NJ .
ULTRAMICROSCOPY, 2003, 95 (1-4) :85-91
[8]   High brightness electron beam from a multi-walled carbon nanotube [J].
de Jonge, N ;
Lamy, Y ;
Schoots, K ;
Oosterkamp, TH .
NATURE, 2002, 420 (6914) :393-395
[9]   Current saturation mechanisms in carbon nanotube field emitters [J].
Dean, KA ;
Chalamala, BR .
APPLIED PHYSICS LETTERS, 2000, 76 (03) :375-377
[10]   Carbon nanotube quantum resistors [J].
Frank, S ;
Poncharal, P ;
Wang, ZL ;
de Heer, WA .
SCIENCE, 1998, 280 (5370) :1744-1746