Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors

被引：14

作者：

Selvanathan, D ^{[1
]}

Zhou, L

Kumar, V

Adesida, I

Long, JP

Johnson, MAL

Schetzina, JF

机构：

[1] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[3] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 14期

关键词：

D O I：

10.1049/el:20020500

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-resistance ohmic contacts on Al0.59Ga0.41N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 x 10(-5) Omega-cm(2) was achieved using a pre-metallisation treatment of the surface in an SiCl4 plasma with a self-bias voltage of -300 V in a reactive ion etching system.

引用

页码：755 / 756

页数：2

共 3 条

[1] Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors [J].

Adivarahan, V ;

Simin, G ;

Tamulaitis, G ;

Srinivasan, R ;

Yang, J ;

Khan, MA ;

Shur, MS ;

Gaska, R .

APPLIED PHYSICS LETTERS, 2001, 79 (12) :1903-1905

[2] Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors [J].

Li, T ;

Lambert, DJH ;

Beck, AL ;

Collins, CJ ;

Yang, B ;

Wong, MM ;

Chowdhury, U ;

Dupuis, RD ;

Campbell, JC .

ELECTRONICS LETTERS, 2000, 36 (18) :1581-1583

[3] The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-type GaN [J].

Ping, AT ;

Chen, Q ;

Yang, JW ;

Khan, MA ;

Adesida, I .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) :261-265

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