Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors

被引：45

作者：

Li, T ^{[1
]}

Lambert, DJH ^{[1
]}

Beck, AL ^{[1
]}

Collins, CJ ^{[1
]}

Yang, B ^{[1
]}

Wong, MM ^{[1
]}

Chowdhury, U ^{[1
]}

Dupuis, RD ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 18期

关键词：

D O I：

10.1049/el:20001110

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solar-blind Schottky metal-semiconductor-metal photodetectors fabricated on epitaxial Al0.4Ga0.6N layers grown by metalorganic chemical vapour deposition are reported. The devices exhibit low dark current and an external quantum efficiency as high as 49% (at lambda = 272nm) at 90V bias, with a corresponding responsivity R = 107mA/W. A visible-to-UV rejection factor of more than three orders of magnitude is demonstrated. The 3dB bandwidth is 100MHz and the detectivity is estimated to be 3.3 x 10(10)cm.Hz(1/2)/W.

引用

页码：1581 / 1583

页数：3

共 8 条

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