Schottky barrier photodetectors based on AlGaN

被引：147

作者：

Osinsky, A

Gangopadhyay, S

Lim, BW

Anwar, MZ

Khan, MA

Kuksenkov, DV

Temkin, H

机构：

[1] APA Opt Inc, Blaine, MN 55449 USA

[2] Texas Tech Univ, Dept Elect Engn, Lubbock, TX 79409 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 06期

关键词：

D O I：

10.1063/1.120862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report solar-blind AlxGa1-xN photovoltaic detectors with cutoff wavelengths as short as 290 nm. Mesa geometry devices of different active areas are fabricated and characterized for spectral responsitivity, speed, and noise performance. The responsivity of the devices near the cutoff wavelength is 0.07 A/W. The detector noise is found to be 1/f limited, with a noise equivalent power of 6.6 x 10(-9) W over the total response bandwidth of 100 kHz. (C) 1998 American Institute of Physics.

引用

页码：742 / 744

页数：3

共 10 条

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