High responsitivity intrinsic photoconductors based on AlxGa1-xN

This letter reports on the fabrication and characterization of visible-blind ultraviolet photoconductors using single-crystal AlxGa1-xN layers deposited on basal plane sapphire substrates. With aluminum mole fractions ranging from 5% to 61%, the long-wavelength cutoff can be varied from 350 to 240 nm. Photoresponsitivities as high as several hundred amperes per watt were measured with 10 mu m interelectrode spacing. (C) 1996 American Institute of Physics.