Solar-blind AlGaN photodiodes with very low cutoff wavelength

被引：170

作者：

Walker, D ^{[1
]}

Kumar, V ^{[1
]}

Mi, K ^{[1
]}

Sandvik, P ^{[1
]}

Kung, P ^{[1
]}

Zhang, XH ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 04期

关键词：

D O I：

10.1063/1.125768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and characterization of AlxGa1-xN photodiodes (x similar to 0.70) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The peak responsivity for -5 V bias is 0.11 A/W at 232 nm, corresponding to an internal quantum efficiency greater than 90%. The device response drops four orders of magnitude by 275 nm and remains at low response for the entire near-ultraviolet and visible spectrum. Improvements were made to the device design including a semitransparent Ni/Au contact layer and a GaN:Mg cap layer, which dramatically increased device response by enhancing the carrier collection efficiency. (C) 2000 American Institute of Physics. [S0003-6951(00)01204-3].

引用

页码：403 / 405

页数：3

共 10 条

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