Visible blind GaN p-i-n photodiodes

We present the growth and characterization of GaN p-i-n photodiodes with a very high degree of visible blindness. The thin films were grown by low-pressure metalorganic chemical vapor deposition. The room-temperature spectral response shows a high responsivity of 0.15 A/W up until 365 nm, above which the response decreases by six orders of magnitude. Current/voltage measurements supply us with a zero bias resistance of 10(11) Ohm. Lastly, the temporal response shows a rise and fall time of 2.5 mu s measured at zero bias. This response time is limited by the measurement circuit. (C) 1998 American Institute of Physics. [S0003-6951(98)01425-9].