Comparison study of ITO thin films deposited onto different substrates at room temperature

被引：11

作者：

Chen, M ^{[1
]}

Pei, ZL ^{[1
]}

Sun, C ^{[1
]}

Gong, J ^{[1
]}

Huang, RF ^{[1
]}

Wen, LS ^{[1
]}

机构：

[1] Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2000年 / 19卷 / 02期

关键词：

D O I：

10.1023/A:1006678809742

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural and the opto-electrical properties of Sn-doped In2O3 (ITO) films fabricated onto different substrates at room temperature are investigated. The deposition of ITO thin films indicates the (400) preferred orientation for the films on polymer and the (222) preferred orientation for the films on both silicon and glass substrates. The process window is broadened for the deposition of ITO films on polymer. The resistivities for the films on polymer are much lower than those deposited on silicon and glass substrates under the same condition. The less dependence of resistivity on oxygen flow rate may be useful for scale production and the deposition of ITO films on flexible substrates.

引用

页码：99 / 101

页数：3

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