ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS INDIUM OXIDE

The authors present a detailed analysis of the electrical and optical properties of amorphous transparent conducting thin films of indium oxide prepared by ion beam sputtering with a wide range of carrier concentrations. They show that the resistivity is dominated by ionised impurity scattering despite the amorphous structure of the films. The weak effect of the structural disorder is confirmed by studies of the interband absorption and is explained by a consideration of the relative length scales of the structural disorder and the Fermi wavelength.