PREPARATION OF SN-DOPED IN2O3 (ITO) FILMS AT LOW DEPOSITION TEMPERATURES BY ION-BEAM SPUTTERING

High-quality films of Sn-doped In2O3 (ITO) have been prepared by ion-beam sputtering at deposition temperatures below 100°C. As in the case of rf-sputtered films, the electrical and optical properties of these films depend strongly on the O2 partial pressure during deposition. As-deposited films with low electrical resistivity (∼5.5×10-4 Ω cm), high visible transmission (≳80%), and high infrared reflectivity at 10 μm (∼84%) have been obtained at O2 pressures of (2-3) ×10-5 Torr by deposition on both glass and Mylar substrates.