Intrinsic dissipation in high-frequency micromechanical resonators

被引：255

作者：

Mohanty, P ^{[1
]}

Harrington, DA ^{[1
]}

Ekinci, KL ^{[1
]}

Yang, YT ^{[1
]}

Murphy, MJ ^{[1
]}

Roukes, ML ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.66.085416

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report measurements of intrinsic dissipation in micron-sized suspended resonators machined from single crystals of galium arsenide and silicon. In these experiments on high-frequency micromechanical resonators, designed to understand intrinsic mechanisms of dissipation, we explore dependence of dissipation on temperature, magnetic field, frequency, and size. In contrast to most of the previous measurements of acoustic attenuation in crystalline and amorphous structures in this frequency range, ours is a resonant measurement; dissipation is measured at the natural frequencies of structural resonance, or modes of the structure associated with flexural and torsional motion. In all our samples we find a weakly temperature dependent dissipation at low temperatures. We compare and contrast our data to various probable mechanisms, including thermoelasticity, clamping, anharmonic mode-coupling, surface anisotropy and defect motion, both in bulk and on surface. The observed parametric dependencies indicate that the internal defect motion is the dominant mechanism of intrinsic dissipation in our samples.

引用

页码：854161 / 8541615

页数：15

共 83 条

[11] Measurement of mechanical resonance and losses in nanometer scale silicon wires [J].