A temperature-dependent MOSFET inversion layer carrier mobility model for device and circuit simulation

A new semi-empirical model for electron and hole mobilities in MOSFET inversion layers is proposed. For the first time, the magnitude of the key parameter eta, which defines the effective transverse field, is found to be a continuous function of temperature for both electrons and holes. The effective transverse field dependences of the universal mobility curves are observed to differ between the electrons and holes, particularly at low temperatures. The proposed model is verified by comparison of experimental data and simulated MOSFET I-V characteristics over a temperature range from 77 K to 343 K.