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RELATIVE IMPORTANCE OF PHONON SCATTERING TO CARRIER MOBILITY IN SI SURFACE-LAYER AT ROOM-TEMPERATURE
被引:32
作者
:
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,OTTAWA,ONTARIO,CANADA
BELL NO RES,OTTAWA,ONTARIO,CANADA
CHENG, YC
[
1
]
SULLIVAN, EA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,OTTAWA,ONTARIO,CANADA
BELL NO RES,OTTAWA,ONTARIO,CANADA
SULLIVAN, EA
[
1
]
机构
:
[1]
BELL NO RES,OTTAWA,ONTARIO,CANADA
来源
:
JOURNAL OF APPLIED PHYSICS
|
1973年
/ 44卷
/ 08期
关键词
:
D O I
:
10.1063/1.1662809
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3619 / 3625
页数:7
相关论文
共 16 条
[1]
ARNOLD E, 1968, IEEE T ELECTRON DEVI, VED15, P1003
[2]
SCATTERING OF CHARGE-CARRIERS IN SILICON SURFACE-LAYERS
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
CHENG, YC
SULLIVAN, EA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
SULLIVAN, EA
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(02)
: 923
-
925
[3]
ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
CHENG, YC
SULLIVAN, EA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
SULLIVAN, EA
[J].
SURFACE SCIENCE,
1973,
34
(03)
: 717
-
731
[4]
CHENG YC, 1972, J JAPAN SOC APPL PHY, V41, P173
[5]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 31
-
&
[6]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
[7]
SEMICONDUCTOR INVERSION LAYERS AND PHONONS IN HALF-SPACE
KAWAJI, S
论文数:
0
引用数:
0
h-index:
0
KAWAJI, S
NAKAMURA, K
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, K
EZAWA, H
论文数:
0
引用数:
0
h-index:
0
EZAWA, H
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1972,
9
(02):
: 762
-
&
[8]
STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
LOGAN, JS
论文数:
0
引用数:
0
h-index:
0
LOGAN, JS
BURKHARDT, PJ
论文数:
0
引用数:
0
h-index:
0
BURKHARDT, PJ
PLISKIN, WA
论文数:
0
引用数:
0
h-index:
0
PLISKIN, WA
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 376
-
&
[9]
EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON
KRIEGLER, RJ
论文数:
0
引用数:
0
h-index:
0
KRIEGLER, RJ
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
CHENG, YC
COLTON, DR
论文数:
0
引用数:
0
h-index:
0
COLTON, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(03)
: 388
-
&
[10]
CARRIER MOBILITY IN SILICON MOSTS
MURPHY, NSJ
论文数:
0
引用数:
0
h-index:
0
机构:
Mullard Research Laboratories, Redhill, Surrey England
MURPHY, NSJ
BERZ, F
论文数:
0
引用数:
0
h-index:
0
机构:
Mullard Research Laboratories, Redhill, Surrey England
BERZ, F
FLINN, I
论文数:
0
引用数:
0
h-index:
0
机构:
Mullard Research Laboratories, Redhill, Surrey England
FLINN, I
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(10)
: 775
-
+
←
1
2
→
共 16 条
[1]
ARNOLD E, 1968, IEEE T ELECTRON DEVI, VED15, P1003
[2]
SCATTERING OF CHARGE-CARRIERS IN SILICON SURFACE-LAYERS
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
CHENG, YC
SULLIVAN, EA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
SULLIVAN, EA
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(02)
: 923
-
925
[3]
ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
CHENG, YC
SULLIVAN, EA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA
SULLIVAN, EA
[J].
SURFACE SCIENCE,
1973,
34
(03)
: 717
-
731
[4]
CHENG YC, 1972, J JAPAN SOC APPL PHY, V41, P173
[5]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 31
-
&
[6]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
[7]
SEMICONDUCTOR INVERSION LAYERS AND PHONONS IN HALF-SPACE
KAWAJI, S
论文数:
0
引用数:
0
h-index:
0
KAWAJI, S
NAKAMURA, K
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, K
EZAWA, H
论文数:
0
引用数:
0
h-index:
0
EZAWA, H
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1972,
9
(02):
: 762
-
&
[8]
STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
LOGAN, JS
论文数:
0
引用数:
0
h-index:
0
LOGAN, JS
BURKHARDT, PJ
论文数:
0
引用数:
0
h-index:
0
BURKHARDT, PJ
PLISKIN, WA
论文数:
0
引用数:
0
h-index:
0
PLISKIN, WA
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 376
-
&
[9]
EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON
KRIEGLER, RJ
论文数:
0
引用数:
0
h-index:
0
KRIEGLER, RJ
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
CHENG, YC
COLTON, DR
论文数:
0
引用数:
0
h-index:
0
COLTON, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(03)
: 388
-
&
[10]
CARRIER MOBILITY IN SILICON MOSTS
MURPHY, NSJ
论文数:
0
引用数:
0
h-index:
0
机构:
Mullard Research Laboratories, Redhill, Surrey England
MURPHY, NSJ
BERZ, F
论文数:
0
引用数:
0
h-index:
0
机构:
Mullard Research Laboratories, Redhill, Surrey England
BERZ, F
FLINN, I
论文数:
0
引用数:
0
h-index:
0
机构:
Mullard Research Laboratories, Redhill, Surrey England
FLINN, I
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(10)
: 775
-
+
←
1
2
→