Ultra-thin, high performance tunnel junctions for III-V multijunction cells

被引：11

作者：

Bauhuis, Gerard J. ^{[1
]}

Mulder, Peter ^{[1
]}

Schermer, John J. ^{[1
]}

机构：

[1] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6524 AJ Nijmegen, Netherlands

来源：

PROGRESS IN PHOTOVOLTAICS | 2014年 / 22卷 / 06期

关键词：

III-V; multijunction; tunnel junction; SOLAR-CELL;

D O I：

10.1002/pip.2333

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Tunnel junctions (TJ) made of p-Al0.1Ga0.9As/n-GaAs are used because of their high peak current and low series resistance, but are not fully transparent. The influence of reducing the thickness of these tunnel junctions on the characteristics of InGaP/GaAs tandem cells was investigated. It was found that ultra-thin TJs with excellent performance can be realized. Even for a 7.5/6-nm thick TJ, which is the thinnest possible in our growth reactor, the peak current density is at least 600A/cm(2). The series resistance of the TJs was found to be at a constant level of 0.6 +/- 0.2mcm(2) for all total thicknesses of the TJ in the 13.5-40nm range. Because of a lower absorption in the TJ, a tandem cell with a 7.5/6-nm thick TJ, compared with a cell with a 20/20-nm thick TJ, gained 0.53 +/- 0.05mA/cm(2) in short circuit current to a value of 14.8mA/cm(2). Copyright (c) 2012 John Wiley & Sons, Ltd.

引用

页码：656 / 660

页数：5

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