Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells

被引：64

作者：

Wheeldon, Jeffrey F. ^{[1
]}

Valdivia, Christopher E. ^{[1
]}

Walker, Alexandre W. ^{[1
]}

Kolhatkar, Gitanjali ^{[1
]}

Jaouad, Abdelatif ^{[2
]}

Turala, Artur ^{[2
]}

Riel, Bruno ^{[3
]}

Masson, Denis ^{[3
]}

Puetz, Norbert ^{[3
]}

Fafard, Simon ^{[3
]}

Ares, Richard ^{[2
]}

Aimez, Vincent ^{[2
]}

Hall, Trevor J. ^{[1
]}

Hinzer, Karin ^{[1
]}

机构：

[1] Univ Ottawa, Ctr Res Photon, Ottawa, ON, Canada

[2] Univ Sherbrooke, Ctr Rech Nanofabricat & Nanocaraceterisat CRN2, Sherbrooke, PQ J1K 2R1, Canada

[3] Cyrium Technol Inc, Ottawa, ON, Canada

来源：

PROGRESS IN PHOTOVOLTAICS | 2011年 / 19卷 / 04期

基金：

加拿大自然科学与工程研究理事会;

关键词：

concentrated photovoltaics; tunnel junctions; AlGaAs; GaAs; InGaP; multijunction solar cell;

D O I：

10.1002/pip.1056

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Four tunnel junction (TJ) designs for multijunction (MJ) solar cells under high concentration are studied to determine the peak tunnelling current and resistance change as a function of the doping concentration. These four TJ designs are: AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs. Time-dependent and time-average methods are used to experimentally characterize the entire current-voltage profile of TJ mesa structures. Experimentally calibrated numerical models are used to determine the minimum doping concentration required for each TJ design to operate within a MJ solar cell up to 2000-suns concentration. The AlGaAs/GaAs TJ design is found to require the least doping concentration to reach a resistance of <10(-4) Omega cm(2) followed by the GaAs/GaAs TJ and finally the AlGaAs/AlGaAs TJ. The AlGaAs/InGaP TJ is only able to obtain resistances of >= 5 x 10(-4) Omega cm(2) within the range of doping concentrations studied. Copyright (C) 2010 John Wiley & Sons, Ltd.

引用

页码：442 / 452

页数：11

共 23 条

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