Anisotropic metal-insulator transition in epitaxial thin films

被引：25

作者：

Altfeder, IB ^{[1
]}

Liang, X

Yamada, T

Chen, DM

Narayanamurti, V

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

[2] Harvard Univ, Rowland Inst, Cambridge, MA 02142 USA

[3] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[4] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 22期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1103/PhysRevLett.92.226404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

By comparing the properties of In and Pb quantum wells in a scanning tunneling microscopy subsurface imaging experiment, we found the existence of lateral bound states, a 2D Mott-Hubbard correlation gap, induced by transverse confinement. Its formation is attributed to spin or charge overscreening of quasi-2D excitations. The signature of the 2D confinement-deconfinement transition is also experimentally observed, with the correlation gap being pinned in the middle of the conduction band. A self-organized 2D Anderson lattice is suggested as a new ground state.

引用

页码：226404 / 1

页数：4

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