Lanthanum germanate as dielectric for scaled Germanium metal-oxide-semiconductor devices

被引：12

作者：

Andersson, C. ^{[1
]}

Rossel, C. ^{[1
]}

Sousa, M. ^{[1
]}

Webb, D. J. ^{[1
]}

Marchiori, C. ^{[1
]}

Caimi, D. ^{[1
]}

Siegwart, H. ^{[1
]}

Panayiotatos, Y. ^{[2
]}

Dimoulas, A. ^{[2
]}

Fompeyrine, J. ^{[1
]}

机构：

[1] IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

[2] Demokritos Natl Ctr Sci Res, GR-15310 Athens, Greece

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

关键词：

Germanium; Passivation; Rare earth oxides;

D O I：

10.1016/j.mee.2009.03.096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a study of La2O3 with lanthanum germanate (LGO) as interfacial layer, or LGO alone as a gate dielectric candidate for scaled germanium metal-oxide-semiconductor devices. Capacitance-voltage (C-V) analysis of as-deposited samples of various oxide thicknesses show a La2O3 with k value of similar to 24-27 with an interfacial LGO with k value of similar to 12. Upon O-2 annealing, the oxides fully transform into LGO without an interfacial layer. The paper also discusses flatband voltage (V-fb) shifts with oxide thickness, from which positive fixed charges in La2O3 can be deduced. It is also shown that these charges are strongly reduced upon the O-2 anneal and LGO formation. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1635 / 1637

页数：3

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