Generalized Monte Carlo approach for the study of the coherent ultrafast carrier dynamics in photoexcited semiconductors

被引:40
作者
Haas, S
Rossi, F
Kuhn, T
机构
[1] UNIV MARBURG,ZENTRUM MAT WISSENSCH,D-35032 MARBURG,GERMANY
[2] BRANDENBURG TECH UNIV,LEHRSTUHL THEORET PHYS,D-03013 COTTBUS,GERMANY
来源
PHYSICAL REVIEW B | 1996年 / 53卷 / 19期
关键词
D O I
10.1103/PhysRevB.53.12855
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A generalized Monte Carlo method for the solution of the coupled set of kinetic equations for the distribution functions and the interband polarization is presented. The aim of this method is to combine the advantages of the description within a fully quantum mechanical picture with the power of the Monte Carlo technique for the treatment of stochastic processes. It is based on a decomposition of the kinetic equations in a coherent and an incoherent part. The former is integrated directly while the latter is sampled by means of a Monte Carlo simulation. This allows us to treat on the same kinetic level carrier thermalization and relaxation as well as dephasing processes. In particular, the problem of photogeneration and its theoretical description is discussed. The equations of motion including the relevant scattering contributions are derived and presented in a way that emphasizes the symmetry between distribution functions and polarization. The scattering terms for the polarization are discussed in detail. We show that some of the approaches commonly used fail in describing correctly the effect of carrier-carrier interaction in the low-density limit. By including terms that have the structure of ''in-scattering'' terms for the interband polarization, the experimentally observed features in the carrier dynamics are well described in the whole density range.
引用
收藏
页码:12855 / 12868
页数:14
相关论文
共 36 条
[1]   DIRECT OBSERVATION OF ELECTRON RELAXATION IN INTRINSIC GAAS USING FEMTOSECOND PUMP-PROBE SPECTROSCOPY [J].
ALEXANDROU, A ;
BERGER, V ;
HULIN, D .
PHYSICAL REVIEW B, 1995, 52 (07) :4654-4657
[2]  
[Anonymous], 1992, Hot carriers in semiconductor nanostructures, DOI DOI 10.1016/B978-0-08-092570-7.50012-X
[3]  
[Anonymous], 1991, SEMICONDUCTORS
[4]   A DYNAMICS-CONTROLLED TRUNCATION SCHEME FOR THE HIERARCHY OF DENSITY-MATRICES IN SEMICONDUCTOR OPTICS [J].
AXT, VM ;
STAHL, A .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1994, 93 (02) :195-204
[5]   NUMERICAL-STUDIES OF FEMTOSECOND CARRIER DYNAMICS IN GAAS [J].
BAILEY, DW ;
STANTON, CJ ;
HESS, K .
PHYSICAL REVIEW B, 1990, 42 (06) :3423-3434
[6]   CARRIER-CARRIER SCATTERING AND OPTICAL DEPHASING IN HIGHLY EXCITED SEMICONDUCTORS [J].
BINDER, R ;
SCOTT, D ;
PAUL, AE ;
LINDBERG, M ;
HENNEBERGER, K ;
KOCH, SW .
PHYSICAL REVIEW B, 1992, 45 (03) :1107-1115
[7]   INITIAL THERMALIZATION OF PHOTOEXCITED CARRIERS IN GAAS STUDIED BY FEMTOSECOND LUMINESCENCE SPECTROSCOPY [J].
ELSAESSER, T ;
SHAH, J ;
ROTA, L ;
LUGLI, P .
PHYSICAL REVIEW LETTERS, 1991, 66 (13) :1757-1760
[8]  
ELSAYED K, 1992, Z PHYS B CON MAT, V86, P345
[9]   CONTINUOUS-WAVE SPECTROSCOPY OF FEMTOSECOND CARRIER SCATTERING IN GAAS [J].
FASOL, G ;
HACKENBERG, W ;
HUGHES, HP ;
PLOOG, K ;
BAUSER, E ;
KANO, H .
PHYSICAL REVIEW B, 1990, 41 (03) :1461-1478
[10]   MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS [J].
FISCHETTI, MV ;
LAUX, SE .
PHYSICAL REVIEW B, 1988, 38 (14) :9721-9745