Band gaps of InN and group III nitride alloys

被引：160

作者：

Wu, J ^{[1
]}

Walukiewicz, W ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2003年 / 34卷 / 1-2期

关键词：

D O I：

10.1016/j.spmi.2004.03.069

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We review the fundamental band gaps of wurtzite InN and group III nitride ternary alloys in the light of the recent discovery of the narrow band gap of InN. The results on the composition, temperature and hydrostatic pressure dependence of the band gaps of these alloys are summarized and discussed. The role of the Burstein-Moss shift for the accurate determination of the band gap is emphasized. The impact of the narrow band gap of InN on new device applications of group III nitrides is briefly discussed. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：63 / 75

页数：13

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