Conformal electroless deposition of Cu seed layer on a 60-nm trench pattern modified with a self-assembled monolayer

被引:19
作者
Han, Won-Kyu [1 ]
Hwang, Gil-Ho [1 ]
Hong, Seok-Jun [1 ]
Kim, Soo-Seok [1 ]
Yoon, Chong-Seung [1 ]
Kwak, Noh-Jung [2 ]
Yeom, Seung-Jin [2 ]
Kim, Jae-Hong [2 ]
Kang, Sung-Goon [1 ]
机构
[1] Hanyang Univ, Div Engn & Mat Sci, Seoul 133791, South Korea
[2] Hynix Semicond Inc, R&D Div, Icheon Si 467701, Kyoungki Do, South Korea
关键词
Electrodeposition; Self-assembled monolayer (SAM); Cu seed layer; 60-nm trench pattern; THIN-FILMS; COPPER; NANOPARTICLES; ELECTRODEPOSITION; SIZE;
D O I
10.1016/j.mee.2008.11.024
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have developed a novel activation technique for the conformal electroless deposition (ELD) of Cu on a SiO2 substrate modified with an organic self-assembled monolayer. The SiO2 substrate was modified with amine groups using 3-aminopropyltriethoxysilane and Au nanoparticles (AuNPs) to form a uniform, continuous catalyst for ELD. The Au catalytic layer formed on the amine-SiO2 substrate was stabilized by electrostatic interactions between the positively charged protonated-amine self-assembled monolayer (SAM) and negatively charged AuNPs. Cu films were then electrolessly deposited on Au-catalyzed SiO2 substrates. The Cu seed layer formed by this method showed a highly conformal and continuous structure. Cu electrodeposition on the 60-nm trench was demonstrated using an acid cupric sulfate electrolyte containing chloride, polyethylene glycol 4000 and bis(3-sulfopropyl)disulfide. The resulting electroplated Cu showed excellent filling capability and no voids or other defects were observed in a 60-nm trench pattern. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:374 / 378
页数:5
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