Criteria for ferromagnetic-insulator-ferromagnetic tunneling

被引:53
作者
Åkerman, JJ [1 ]
Escudero, R
Leighton, C
Kim, S
Rabson, DA
Dave, RW
Slaughter, JM
Schuller, IK
机构
[1] Univ Calif San Diego, Dept Phys 0319, La Jolla, CA 92093 USA
[2] Univ S Florida, Dept Phys, Tampa, FL 33620 USA
[3] Motorola Labs, Phys Sci Res Labs, Tempe, AZ 85284 USA
[4] Natl Autonomous Univ Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico
基金
美国能源部;
关键词
magnetoresistance; thin films-trilayer; tunneling;
D O I
10.1016/S0304-8853(01)00712-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Rowell criteria, commonly used to identify tunneling in magnetic tunnel junctions (MTJ), are scrutinized. While neither the exponential-thickness dependence of the conductivity nor fits of non-linear transport data are found to be reliable tunneling criteria, the temperature-dependent conductivity does remain a solid criterion. Based on experimental studies of the bias and temperature-dependent resistance and magnetoresistance of MTJs, with and without shorted barriers, a new set of criteria is formulated. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:86 / 91
页数:6
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