Thermal conductivity study of porous low K dielectric materials

被引:3
作者
Hu, C [1 ]
Morgen, M [1 ]
Ho, PS [1 ]
Jain, A [1 ]
Gill, WN [1 ]
Plawsky, JL [1 ]
Wayner, PC [1 ]
机构
[1] Univ Texas, Inst Sci Mat, Austin, TX 78712 USA
来源
LOW-DIELECTRIC CONSTANT MATERIALS V | 1999年 / 565卷
关键词
D O I
10.1557/PROC-565-87
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A quantitative characterization of the thermal properties is required to assess the thermal performance of low dielectric constant materials. Recently we have developed a technique based on the 3-omega method for measuring the thermal conductivity of porous dielectric thin films. In this paper we present the results on the measurements of thermal conductivity of thin porous films using this method. A finite element method analysis is used to evaluate the approximations used in the measurement. Two porosity-weighted thermal resistor models are proposed to interpret the results. By studying the dependence of the thermal conductivity on porosity, we are able to discuss the scaling rule of thermal conductivity. Additionally, a steady state layered heater model is used for evaluating the significance of introducing porous ILDs into an interconnect structure.
引用
收藏
页码:87 / 92
页数:6
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