Nanometer-scale wires of monolayer height alkanethiols on AlGaAs/GaAs heterostructures by selective chemisorption

被引：12

作者：

Ohno, H

Nagahara, LA

Gwo, S

Mizutani, W

Tokumoto, H

机构：

[1] JOINT RES CTR ATOM TECHNOL,ANGSTROM TECHNOL PARTNERSHIP,TSUKUBA,IBARAKI 305,JAPAN

[2] JOINT RES CTR ATOM TECHNOL,NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 4B期

关键词：

self-assembled monolayer; AlGaAs/GaAs heterostructures; cleaved surfaces; octadecanethiol; nanometer wires; scanning probe microscopy; metal organic chemical vapor deposition;

D O I：

10.1143/JJAP.35.L512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled nanometer-scale wires (SANWs) composed of octadecylthiol [ODT, CH3(CH2)(17)SH] have been selectively formed on the GaAs surface of an AlGaAs/GaAs heterostructure. The sample grown by metal organic chemical vapor deposition (MOCVD) was cleaved to expose the AlGaAs/GaAs heterostructure in a solution containing the ODT molecules. Both surface properties and morphology of these wires have been investigated simultaneously by scanning probe microscopy. SANWs as narrow as 10 nm in width and similar to 1.0 nm in height were observed. The inability to form an ODT monolayer on the AlGaAs surface was attributed to the formation of an oxide layer.

引用

收藏

页码：L512 / L515

页数：4

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